Two n-channel MOSFETs, T₁ and T₂, are identical in all respects except that the width of T₂ is double that of T₁. Both the transistors are biased in the saturation region of operation, but the gate overdrive voltage (V_GS-V_TH) of T₂ is double that of T₁, where V_GS and V_TH are the gate – to – source voltage and threshold voltage of the transistors, respectively. If the drain current and transconductance of T₁ are ID₁ and gm₁ respectively, the corresponding values of these two parameters for T₂ are