A MOS capacitor is fabricated on p-type Si (silicon) where the metal work function is 4.1 eV and electron affinity of Si is 4.0 eV. EC-FF=0.9 eV, where EC and EF are the conduction band minimum and the Fermi energy levels of Si, respectively. Oxide . oxide thickness and electronic charge
If the measured flat band voltage of the capacitor is -1V, then the magnitude of the fixed charge at the oxide-semiconductor interface, in 
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