Consider an n-channel MOSFET having width W, length L, electron mobility in the channel
µ_n and oxide capacitance per unit area C_ox. If gate-to-source voltage V_GS=0.7V, drain-to- source voltage V_DS=0.1V, ( µ_nC_ox) =100 µA/V², threshold voltage V_TH=0.3V and (W/L) =50, then the transconductance g_m (in mA/V) is______