As shown a uniformly doped Silicon (Si) bar of length L = 0.1μm with a donor concentration N _D =10¹⁶ cm^-3 is illuminated at x = 0 such that electron and hole pairs are generated at the rate of G_L = G_L0where G_L0= . Hole lifetime is s, electronic charge q=1.6×C, hole diffusion coefficient D_p=100/2 and low level injection condition prevails. Assuming a linearly decaying steady state excess hole concentration that goes to 0 at x = L, the magnitude of the diffusion current density at x = L/2, in A/cm², is ____.