A bar of Gallium Arsenide (GaAs) is doped with Silicon such

General Aptitude
Electronics and comm.

M: +1.00/-0.33

A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic sites in the GaAs crystal. Which one of the following statement is true?

[GATE EC 2017 Set 1]

A Silicon atoms act as p-type dopants in Arsenic sites and n-type dopants in Gallium sites

B Silicon atoms act as n-type dopants in Arsenic sites and p-type dopants in Gallium sites

C Silicon atoms act as p-type dopants in Arsenic as well as Gallium sites

D Silicon atoms act as n-type dopants in Arsenic as well as Gallium sites