Consider a long-channel MOSFET with a channel length 1 μm and width 10 μm. The device parameters are acceptor concentration NA = 5 × 10¹⁶ cm^-3, electron mobility μ_n = 800 cm²/V-s, oxide capacitance/area C_ox = 3.45 × 10^-7 F/cm², threshold voltage V_T = 0.7 V. The drain saturation current (I_Dsat) for a gate voltage of 5 V is ____________ mA (rouonded off to two decimal places).

[ε₀ = 8.854 × 10^-14 F/cm, ε_si = 11.9]