An n-channel enhancement mode MOSFET is biased at VGS>VTH

General Aptitude
Electronics and comm.

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An n-channel enhancement mode MOSFET is biased at V_GS>V_THand, V_DS>(V_GS-V_TH), where V_GSis the gate-to-source voltage, V_DSis the drain-to-source voltage and V_THis the threshold voltage. Considering channel length modulation effect to be significant, the MOSFET behaves like a

[GATE EC 2017 Set 2]

A voltage source with zero output impedance

B voltage source with non-zero output impedance

C current source with finite output impedance

D current source with infinite output impedance